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1

An experimental memory cell using edge-junction gates

Geppert, L., Rajeevakumar, T., Henkels, W., Deutsch, U.

Journal:

IEEE Transactions on Magnetics

Year:

1983

Language:

english

File:

PDF, 594 KB

english, 1983

2

Observation of nonresonant vortex motion in a long Josephson tunnel junction

Rajeevakumar, T. V., Przybysz, John X., Chen, J. T., Langenberg, D. N.

Journal:

Physical Review B

Year:

1980

Language:

english

File:

PDF, 261 KB

english, 1980

3

Observation of step structures on the resistive branches of long Josephson tunnel junctions

Michael R. Scheuermann, T.V. Rajeevakumar, Jhy-Jiun Chang, J.T. Chen

Journal:

Year:

1981

Language:

english

File:

PDF, 140 KB

english, 1981

4

Vortex motion for device applications

T.V. Rajeevakumar

Journal:

Year:

1982

Language:

english

File:

PDF, 248 KB

english, 1982

5

Vortex motion for device applications

T.V. Rajeevakumar

Journal:

Year:

1982

Language:

english

File:

PDF, 294 KB

english, 1982

6

Energy gap suppression and instability in superconducting tin films under strong quasiparticle injection

T. V. Rajeevakumar, Jhy-Jiun Chang, J. T. Chen

Journal:

Journal of Low Temperature Physics

Year:

1979

Language:

english

File:

PDF, 326 KB

english, 1979

7

Observation of a microwave induced resistive state in a long Josephson tunnel junction

T.V. Rajeevakumar, John X. Przybysz, J.T. Chen

Journal:

Solid State Communications

Year:

1978

Language:

english

File:

PDF, 367 KB

english, 1978

8

A 12-ns low-temperature DRAM

Henkels, W.H., Lu, N.C.C., Hwang, W., Rajeevakumar, T.V., Franch, R.L., Jenkins, K.A., Bucelot, T.J., Heidel, D.F., Immediato, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 998 KB

english, 1989

9

An 800-MHz embedded DRAM with a concurrent refresh mode

Kirihata, T., Parries, P., Hanson, D.R., Hoki Kim, Golz, J., Fredeman, G., Rajeevakumar, R., Griesemer, J., Robson, N., Cestero, A., Khan, B.A., Geng Wang, Wordeman, M., Iyer, S.S.

Journal:

IEEE Journal of Solid-State Circuits

Year:

2005

Language:

english

File:

PDF, 1.40 MB

english, 2005

10

A 20-ns 128-kbit×4 high speed DRAM with 330-Mbit/s data rate

Lu, N.C.C., Chao, H.H., Hwang, W., Henkels, W.H., Rajeevakumar, T.V., Hanafi, H.I., Terman, L.M., Franch, R.L.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1988

Language:

english

File:

PDF, 1.14 MB

english, 1988

11

A 22-ns 1-Mbit CMOS high-speed DRAM with address multiplexing

Lu, N.C.-C., Bronner, G.B., Kitamura, K., Scheuerlein, R.E., Henkels, W.H., Dhong, S.H., Katayama, Y., Kirihata, T., Niijima, H., Franch, R.L., Wang, W., Nishiwaki, M., Pesavento, F.L., Rajeevakumar,

Journal:

IEEE Journal of Solid-State Circuits

Year:

1989

Language:

english

File:

PDF, 1.43 MB

english, 1989

12

A Josephson vortex-flow device

Rajeevakumar, T. V.

Journal:

Applied Physics Letters

Year:

1981

Language:

english

File:

PDF, 414 KB

english, 1981

13

[IEEE 1994 IEEE Symposium on Low Power Electronics - San Diego, CA, USA (10-12 Oct. 1994)] Proceedings of 1994 IEEE Symposium on Low Power Electronics - Low-dropout on-chip voltage regulator for low-power circuits

Shin, H.J., Reynolds, S.K., Wrenner, K.R., Rajeevakumar, T., Gowda, S., Pearson, D.J.

Year:

1994

Language:

english

File:

PDF, 288 KB

english, 1994

14

[IEEE 1993 Symposium on VLSI Circuits - Kyoto, Japan (1997.06.14-1997.06.14)] Symposium on VLSI Circuits - An experimental 27w 1Mb CMOS high-speed DRAM

Dhong,, Henkels,, Lu,, Scheuerlein,, Brunner,, Kitamura,, Katavama,, Niijima,, Kirihata,, Franch,, Hwang,, Nishiwaki,, Pesavento,, Rajeevakumar,, Sakaue,, Suzuki,, Vano,

Year:

1989

Language:

english

File:

PDF, 165 KB

english, 1989

15

[IEEE 2007 IEEE Symposium on VLSI Circuits - Kyoto, Japan (2007.06.14-2007.06.16)] 2007 IEEE Symposium on VLSI Circuits - A Compact eFUSE Programmable Array Memory for SOI CMOS

Safran, John, Leslie, Alan, Fredeman, Gregory, Kothandaraman, Chandrasekharan, Cestero, Alberto, Chen, Xiang, Rajeevakumar, Raj, Kim, Deok-kee, Li, Yan Zun, Moy, Dan, Robson, Norman, Kirihata, Toshiak

Year:

2007

Language:

english

File:

PDF, 2.18 MB

english, 2007

16

[IEEE 1991 Symposium on VLSI Technology - Oiso, Japan (May 28-30, 199)] 1991 Symposium on VLSI Technology - A Novel Trench Capacitor Structure for ULSI DRAMs

Rajeevakumar, T.V., Bronner, G.B.

Year:

1991

File:

PDF, 562 KB

1991

17

[IEEE Comput. Soc 16th IEEE VLSI Test Symposium - Monterey, CA, USA (26-30 April 1998)] Proceedings. 16th IEEE VLSI Test Symposium (Cat. No.98TB100231) - Designing a testable system on a chip

Kosonocky, S.V., Bright, A., Warren, K., Haring, R.A., Klepner, S., Asaad, S., Basavaiah, S., Havreluk, B., Heidel, D., Immediato, M., Jenkin, K., Joshi, R., Parker, B., Rajeevakumar, T.V., Stawiasz,

Year:

1998

Language:

english

File:

PDF, 139 KB

english, 1998

18

[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - A buried-trench DRAM cell using a self-aligned epitaxy over trench technology

Lu, N.C.C., Rajeevakumar, T.V., Bronner, G.B., Ginsberg, B., Machesney, B.J., Sprogis, E.J.

Year:

1988

File:

PDF, 393 KB

1988

19

[IEEE 1993 Symposium on VLSI Circuits - Kyoto, Japan (1997.06.14-1997.06.14)] Symposium on VLSI Circuits - An experimental low temperature DRAM

Henkels,, Lu,, Hwang,, Rajeevakumar,, Franch,, Jenkins,, Bumlot,, Heidel,, Immediato,

Year:

1989

Language:

english

File:

PDF, 146 KB

english, 1989

20

[IEEE 1991 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan (22-24 May 1991)] 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers - Characteristics of vertical p-channel MOSFETs for high density circuit application

Wen, D.S., Chang, W.H., Rajeevakumar, T.V., Bronner, G.B., McFarland, P.A., Lii, Y., Chen, T.C., Pesavento, F.L., Manny, M.P., Hwang, W., Dhong, S.H.

Year:

1991

Language:

english

File:

PDF, 274 KB

english, 1991

21

[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - Trench storage capacitors for high density DRAMs

Rajeevakumar, T.V., Lii, T., Weinberg, Z.A., Bronner, G.B., McFarland, P., Coane, P., Kwietniak, K., Megdanis, A., Stein, K.J., Cohen, S.

Year:

1991

Language:

english

File:

PDF, 401 KB

english, 1991

22

[IEEE International Symposium on VLSI Technology, Systems and Applications - Taipei, Taiwan (17-19 May 1989)] International Symposium on VLSI Technology, Systems and Applications - A low temperature 12 ns DRAM

Henkels, W.H., Lu, N.C.C., Hwang, W., Rajeevakumar, T.V., Franch, R.L., Jenkins, K.A., Bucelot, T.J., Heidel, D.F., Immediato, M.J.

Year:

1989

Language:

english

File:

PDF, 442 KB

english, 1989

23

A new failure mode of radiation-induced soft errors in dynamic memories

Rajeevakumar, T.V., Lu, N.C.C., Henkels, W.H., Hwang Wei,, Franch, R.

Journal:

IEEE Electron Device Letters

Year:

1988

Language:

english

File:

PDF, 278 KB

english, 1988

24

[IEEE 2004 IEEE International Solid-State Circuits Conference - San Francisco, CA, USA (15-19 Feb. 2004)] 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) - An 800MHz embedded DRAM with a concurrent refresh mode

Kirihata, T., Parries, P., Hanson, D., Kim, H., Golz, J., Fredeman, G., Rajeevakumar, R., Griesemer, J., Robson, N., Cestero, A., Wordeman, M., Iyer, S.

Year:

2004

Language:

english

File:

PDF, 722 KB

english, 2004

25

Magnetic-Resonance-Like dc Current in Josephson Tunnel Junctions Containing Vortices

Rajeevakumar, T. V., Chen, J. T.

Journal:

Physical Review Letters

Year:

1979

Language:

english

File:

PDF, 718 KB

english, 1979

26

Critical conditions of flux flow in long Josephson tunnel junctions

Rajeevakumar, T. V., Geppert, L. M., Chen, J. T.

Journal:

Journal of Applied Physics

Year:

1980

Language:

english

File:

PDF, 552 KB

english, 1980

27

[IEEE 1988 IEEE International Solid-State Circuits Conference - San Francisco, CA (1988.02.17-1988.02.19)] 1988 IEEE International Solid-State Circuits Conference, 1988 ISSCC. Digest of Technical Papers - A 20ns 512kb Dram with 83mhz Page Operation

Lu,, Hu Chao,, Wei Hwang,, Henkels,, Rajeevakumar,, Hanafi,, German,, Franch,

Year:

1988

Language:

english

File:

PDF, 1.33 MB

english, 1988

28

[IEEE Workshop on Low Temperature Semiconductor Electronics - Burlington, VT, USA (7-8 Aug. 1989)] Proceedings of the Workshop on Low Temperature Semiconductor Electronics - Low temperature SER and noise in a high speed DRAM

Henkels, W.H., Lu, N.C.C., Hwang, W., Rajeevakumar, T.V., Franch, R.L., Jenkins, K.A., Bucelot, T.J., Heidel, D.F., Immediato, M.J.

Year:

1989

Language:

english

File:

PDF, 364 KB

english, 1989

29

[IEEE 2007 IEEE Custom Integrated Circuits Conference - San Jose, CA, USA (2007.09.16-2007.09.19)] 2007 IEEE Custom Integrated Circuits Conference - Electrically Programmable Fuse (eFUSE): From Memory Redundancy to Autonomic Chips

Robson, Norm, Safran, John, Kothandaraman, Chandrasekharan, Cestero, Alberto, Chen, Xiang, Rajeevakumar, Raj, Leslie, Alan, Moy, Dan, Kirihata, Toshiaki, Iyer, Subramanian

Year:

2007

Language:

english

File:

PDF, 5.08 MB

english, 2007

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